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Proceedings Paper

Comparison of self-mode-locking in monolithic and external cavity diode laser at 1550 nm
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Paper Abstract

In this work, a comparison of self-mode-locking of a 100 GHz repetition-rate monolithic diode as a stand-alone laser source and whilst employed in an external cavity arrangement at 1550 nm is reported. We operated our chip at a forward current slightly above the monolithic chip's lasing threshold and compensated the chirp by a single mode fiber. Ultrashort pulses with 1 ps pulse-width were generated. Changes in the dispersion compensation parameters due to the changed cavity dispersion were analyzed.

Paper Details

Date Published: 24 February 2020
PDF: 6 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011T (24 February 2020); doi: 10.1117/12.2545780
Show Author Affiliations
M. Ali Alloush, Ruhr-Univ. Bochum (Germany)
Amer Bassal, Ruhr-Univ. Bochum (Germany)
Carsten Brenner, Ruhr-Univ. Bochum (Germany)
Catherine Fortin, III-V Lab. (France)
Karim Mekhazni, III-V Lab. (France)
Piero Gamarra, III-V Lab. (France)
Cosimo Calo, III-V Lab. (France)
Martin R. Hofmann, Ruhr-Univ. Bochum (Germany)

Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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