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Proceedings Paper

High speed integrated waveguide lateral Si/Ge/Si photodiodes with optimized transit time
Author(s): H. Zegmout; B. Szelag; S. Bernabé; L. Virot; P. Grosse; Q. Wilmart; S. Brision
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Paper Abstract

In this paper, we present a statistical characterization results for a high-speed germanium photo-detector structure that calls for no additional process steps than a regular modulator. The photodiodes in question are waveguide PIN SiGeSi photodiodes with targeted bandwidths on the range of 50GHz and a responsivity of more than 0.8A/W at 1310nm. The design logic, mainly intended to reduce the transit time while conserving a high detection area will be explained in details.

Paper Details

Date Published: 26 February 2020
PDF: 8 pages
Proc. SPIE 11285, Silicon Photonics XV, 1128515 (26 February 2020); doi: 10.1117/12.2545723
Show Author Affiliations
H. Zegmout, CEA-LETI (France)
B. Szelag, CEA-LETI (France)
S. Bernabé, CEA-LETI (France)
L. Virot, CEA-LETI (France)
P. Grosse, CEA-LETI (France)
Q. Wilmart, CEA-LETI (France)
S. Brision, CEA-LETI (France)

Published in SPIE Proceedings Vol. 11285:
Silicon Photonics XV
Graham T. Reed; Andrew P. Knights, Editor(s)

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