Proceedings Paper
Highly efficient 9xx-nm band single emitter laser diodes optimized for high output power operation| Format | Member Price | Non-Member Price |
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Paper Abstract
We report the highest power conversion efficiency (PCE) of 74.6% at peak and more than 70% PCE maintained up to high output power of 20W in broad stripe laser diodes (LDs) lasing at a 9xx-nm band. Optimal layer structure design including enhancement of asymmetry in waveguide structure and elimination of nonlinear resistance due to band discontinuity enables electric resistance to be reduced by 33% compared to conventional LDs without notable increase in optical internal loss. These PCE values from middle to high output power range marks the highest record reported so far.
Paper Details
Date Published: 2 March 2020
PDF: 6 pages
Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 1126203 (2 March 2020); doi: 10.1117/12.2545721
Published in SPIE Proceedings Vol. 11262:
High-Power Diode Laser Technology XVIII
Mark S. Zediker, Editor(s)
PDF: 6 pages
Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 1126203 (2 March 2020); doi: 10.1117/12.2545721
Show Author Affiliations
Yuji Yamagata, Fujikura Ltd. (Japan)
Yoshikazu Kaifuchi, Optoenergy Inc. (Japan)
Ryozaburo Nogawa, Fujikura Ltd. (Japan)
Yoshikazu Kaifuchi, Optoenergy Inc. (Japan)
Ryozaburo Nogawa, Fujikura Ltd. (Japan)
Kyohei Yoshida, Fujikura Ltd. (Japan)
Rintaro Morohashi, Fujikura Ltd. (Japan)
Masayuki Yamaguchi, Fujikura Ltd. (Japan)
Rintaro Morohashi, Fujikura Ltd. (Japan)
Masayuki Yamaguchi, Fujikura Ltd. (Japan)
Published in SPIE Proceedings Vol. 11262:
High-Power Diode Laser Technology XVIII
Mark S. Zediker, Editor(s)
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