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Proceedings Paper

Bandgap modeling of alloy and associated superlattice materials and photonic processes in a barrier infrared detector device
Author(s): Yajun Wei
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Paper Abstract

III-V superlattice has emerged as an important material in the field of infrared detection. Infrared cameras and systems have been built and demonstrated worldwide. Theoretical modeling plays a significant role in terms of understanding the materials, devices, and associated technical limits. In this talk, temperature dependent empirical tight binding modeling (ETBM) will be discussed for efficient modeling of the bandgap of an alloy and a superlattice incorporating alloy compositions. It was observed that the temperature dependency of superlattice bandgap is independent of the superlattice design for a nominal bandgap at a given temperature. In addition, effect of cross incorporation of elements will be modeled. Its manifestation in xray diffraction will be shown. On the device side, a theory of photo carrier collection mechanism will be proposed for a barrier infrared detector structure. A hypothesis of photonic up/down conversion and photo current gain mechanism without excessive noise will also be discussed.

Paper Details

Date Published: 31 January 2020
PDF: 11 pages
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112881J (31 January 2020); doi: 10.1117/12.2545587
Show Author Affiliations
Yajun Wei, L3Harris Technologies (United States)


Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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