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Proceedings Paper

Analysis of perimeter recombination on multijunction solar cells using luminescence imaging (Conference Presentation)
Author(s): Hao Xu; Hassanet Sodabanlu; Matthew M. Wilkins; Amaury Delamarre; Theodorus J. Wijaya; Kentaroh Watanabe; Yoshiaki Nakano; Masakazu Sugiyama

Paper Abstract

This paper describes a study of perimeter recombination on millimeter-scale multijunction photovoltaic cells using luminescence characterizations and a quasi-3D PV modeling. Device performance of controlled GaAs 1J cells shows an obvious perimeter dependency. By contrast, the performance of controlled InGaP 1J cells is less dependent on perimeters. Corresponding InGaP/GaAs 2J cells are assessed whose results exhibit combined contributions from both subcells. Luminescence method using current transport efficiency mapping and the PV modeling are able to reveal the influence of perimeter recombination and series resistance effect for individual subcells.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750K (10 March 2020); doi: 10.1117/12.2545575
Show Author Affiliations
Hao Xu, The Univ. of Tokyo (Japan)
Hassanet Sodabanlu, The Univ. of Tokyo (Japan)
Matthew M. Wilkins, Univ. of Ottawa (Canada)
Amaury Delamarre, Ctr. de Nanosciences et de Nanotechnologies (France)
Theodorus J. Wijaya, The Univ. of Tokyo (Japan)
Kentaroh Watanabe, The Univ. of Tokyo (Japan)
Yoshiaki Nakano, The Univ. of Tokyo (Japan)
Masakazu Sugiyama, The Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 11275:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
Alexandre Freundlich; Masakazu Sugiyama; Stéphane Collin, Editor(s)

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