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Proceedings Paper

Lowering GeSn lasing thresholds for future integration on Si (Conference Presentation)
Author(s): Anas Elbaz; Jeremie Chretien; Riazul Arefin; Lara Casiez; Konstaninos Pantzas; Gilles Patriarche; Isabelle Sagnes; Sebastien Sauvage; Xavier Checoury; Nicolas Pauc; Vincent Calvo; Alexei Chelnokov; Vincent Reboud; Jean-Michel Hartmann; Moustafa El Kurdi

Paper Abstract

Lasing in bulk GeSn alloys have been reported lately with relatively high thresholds in the range of several hundreds of kW/cm². This can be mainly attributed to high defect densities of high Sn content alloy thick layers grown on relaxed Ge-VS. Indeed the use of high Sn contents in Ge(1-x)Snx alloy to reach direct band gap alignment (with xSn>10%) consequently results in large lattice mismatches with Ge and therefore produces large defect densities in partially relaxed thick layers. We show here that GeSn alloys with low Sn content exhibit strongly reduced lasing thresholds densities, in the 10 kW/cm² range, in microdisk cavities. We developed a layer transfer technology enabling management of the GeSn/Ge defect interface thus allowing to further reduce lasing thresholds in the kW/cm² range. The layer transfer additionally allows tensile strain engineering using silicon nitride stressor layer to increase the band structure directness as required for RT-laser operation.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11285, Silicon Photonics XV, 112850S (9 March 2020); doi: 10.1117/12.2545510
Show Author Affiliations
Anas Elbaz, Univ. Paris-Sud (France)
Jeremie Chretien, CEA-INAC (France)
Riazul Arefin, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (France)
Lara Casiez, CEA-LETI (France)
Konstaninos Pantzas, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (France)
Gilles Patriarche, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (France)
Isabelle Sagnes, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (France)
Sebastien Sauvage, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (French Polynesia)
Xavier Checoury, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (France)
Nicolas Pauc, CEA-INAC (France)
Vincent Calvo, CEA-INAC (France)
Alexei Chelnokov, CEA-LETI (France)
Vincent Reboud, CEA-LETI (France)
Jean-Michel Hartmann, CEA-LETI (France)
Moustafa El Kurdi, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 11285:
Silicon Photonics XV
Graham T. Reed; Andrew P. Knights, Editor(s)

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