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Proceedings Paper

Current-controlled spin-orbit torque switching in antiferromagnetic PtMn devices (Conference Presentation)
Author(s): Victor Lopez Dominguez; Jiacheng Shi; Francesca Garesci; Chulin Wang; Hamid Almasi; Matthew Grayson; Giovanni Finocchio; Pedram Khalili

Paper Abstract

In this work, we investigate the current-induced switching in micrometer-scale circular memory bits based on the metallic antiferromagnet PtMn, which is already widely used as part of the pinned layer in in-plane magnetic tunnel junctions manufactured on CMOS. The device shows reversible switching in response to currents applied to the Pt layer, with opposite current polarities achieving opposite switching directions in the PtMn. The switching current density is ~2 MA/cm2. We show that the switching process is essentially unaffected by external fields up to 16 T, and is robust over a wide temperature range. We also investigate the switching process by micromagnetic simulations, which shed light on the current-controlled domain structure of the device and the role of different torque terms in the switching process. Our results pave the way towards practical antiferromagnetic memories integrated on silicon.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 112880Z (10 March 2020); doi: 10.1117/12.2545391
Show Author Affiliations
Victor Lopez Dominguez, Northwestern Univ. (United States)
Jiacheng Shi, Northwestern Univ. (United States)
Francesca Garesci, Univ. degli Studi di Messina (Italy)
Chulin Wang, Northwestern Univ. (United States)
Hamid Almasi, Northwestern Univ. (United States)
Matthew Grayson, Northwestern Univ. (United States)
Giovanni Finocchio, Univ. degli Studi di Messina (Italy)
Pedram Khalili, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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