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Proceedings Paper

AlN/[beta]-Ga2O3-based HEMT for high-power devices (Conference Presentation)
Author(s): Yi Lu; Hsin-Hung Yao; Xiaohang Li

Paper Abstract

In this work, the heterostructures of III-N materials/β-Ga2O3 based on the modern polarization theory and band alignment are systematically investigated. The nitrogen (N)-polar AlN/β-Ga2O3 heterojunction is found that can form the triangle channel and hold large 2DEG density on the interface through polarization engineering. Compared with GaN-based HEMT, the proposed N-polar AlN/β-Ga2O3 HEMT with polarization-induced property can realize much larger 2DEG density, better DC and transconductance performance, as well as higher breakdown voltage.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810M (10 March 2020); doi: 10.1117/12.2545370
Show Author Affiliations
Yi Lu, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Hsin-Hung Yao, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Xiaohang Li, King Abdullah Univ. of Science and Technology (Saudi Arabia)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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