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Proceedings Paper

Application of porous GaN for microLED
Author(s): Jie Song; Joo Won Choi; Chen Chen; Kai Wang; Dan Wu
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Paper Abstract

We report loading quantum dots (QDs) inside nanoporous (NP) GaN and using NP-GaN as a color converter to fabricate micro-LEDs. A strong light scattering can be induced by NP-GaN and blue pumping light can be significantly absorbed by red and green QDs. More than 90% of light conversion efficiency has been achieved for both red and green QDs inside NP-GaN. Monolithic red, green, and blue color micro-LEDs have been achieved with loading red and green QDs into NPGaN.

Paper Details

Date Published: 16 February 2020
PDF: 5 pages
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112801E (16 February 2020); doi: 10.1117/12.2545330
Show Author Affiliations
Jie Song, Saphlux Inc. (United States)
Joo Won Choi, Saphlux Inc. (United States)
Chen Chen, Saphlux Inc. (United States)
Kai Wang, Southern Univ. of Science and Technology of China (China)
Dan Wu, Southern Univ. of Science and Technology of China (China)

Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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