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Proceedings Paper

940nm 400mW transverse single mode laser diode with RISA structure
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Paper Abstract

We present evaluation results of the 940nm 400mW transverse single-mode laser diodes (LDs) with real reflective index self-aligned (RISA) structure based on graded index separate confinement hetero structures (GRIN-SCH) for a three-dimensional (3D) depth sensor. The AlGaAs/InGaAs laser diodes that are adopted with RISA structure have many advantages over conventional complex refractive index guided lasers, what include low operating current, high temperature operation and stable fundamental transverse-mode operation up to high power levels.

Simultaneously, the RISA process is easy to control the waveguide channel width and does not require stable oxide mask for the regrowth of aluminum alloys, so it is possible to manufacture high output power and high reliability laser diodes.

At the optical power 400mW under the continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full-width at half-maximum vertical divergence angle of 23°. A threshold current (Ith) of 33mA, slope efficiency (SE) of 0.81mW/mA and operating current (Iop) of 503mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 657mW and long-term reliability of 60°C with TO-56 package.

Paper Details

Date Published: 24 February 2020
PDF: 12 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010Z (24 February 2020); doi: 10.1117/12.2545268
Show Author Affiliations
Jeong-Geun Kwak, Quantum Semiconductor International Co., Ltd. (Korea, Republic of)
Jong-Keun Park, Quantum Semiconductor International Co., Ltd. (Korea, Republic of)
Jeong-Hyun Park, Quantum Semiconductor International Co., Ltd. (Korea, Republic of)
Jae-Gyu Kim, Quantum Semiconductor International Co., Ltd. (Korea, Republic of)
An-Sik Choi, Quantum Semiconductor International Co., Ltd. (Korea, Republic of)
Tae-Kyung Kim, Quantum Semiconductor International Co., Ltd. (Korea, Republic of)
Duchang Heo, Korea Electrotechnology Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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