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Proceedings Paper

Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector
Author(s): K. Paschke; G. Blume; J. Pohl; D. Feise; P. Ressel; A. Sahm; B. Sumpf
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Paper Abstract

High radiance red-emitting light sources are required for several laser applications such as holography, interferometry or various types of spectroscopy. As many of such applications are moving out of the lab into industrial environment there is a high demand for small sized, efficient and reliable laser sources, for which semiconductor lasers are preferred. We will present a red-emitting DBR tapered diode lasers near 633 nm which provide more than 250 mW of optical power. The coherence length is more than 1 m and the beam quality is almost diffraction limited with M21/e2 = 1.2. We also demonstrate an operation of more than 10000 h at a power level of 200 mW to 250 mW, making these lasers an ideal replacement for high-power HeNe lasers.

Paper Details

Date Published: 2 March 2020
PDF: 8 pages
Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620L (2 March 2020); doi: 10.1117/12.2545113
Show Author Affiliations
K. Paschke, Ferdinand-Braun-Institut (Germany)
G. Blume, Ferdinand-Braun-Institut (Germany)
J. Pohl, Ferdinand-Braun-Institut (Germany)
D. Feise, Ferdinand-Braun-Institut (Germany)
P. Ressel, Ferdinand-Braun-Institut (Germany)
A. Sahm, Ferdinand-Braun-Institut (Germany)
B. Sumpf, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 11262:
High-Power Diode Laser Technology XVIII
Mark S. Zediker, Editor(s)

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