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Proceedings Paper

Recent progress in bulk GaN growth (Conference Presentation)

Paper Abstract

Recent progress in bulk GaN growth technology will be presented. New results of basic ammonothermal GaN crystallization and halide vapor phase epitaxy (HVPE) of GaN will be shown and analyzed. The advantages, disadvantages and challenges of both methods will be discussed. An influence of lateral growth on critical thicknesses and structural quality of crystallized GaN layers by both methods will be demonstrated. Reduction of lateral crystallization and growth only in one crystallographic direction will be shown.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128004 (10 March 2020); doi: 10.1117/12.2545062
Show Author Affiliations
Michal Bockowski, Institute of High Pressure Physics (Poland)
Boleslaw Lucznik, Institute of High Pressure Physics (Poland)
Mikolaj Amilusik, Institute of High Pressure Physics (Poland)
Michal Fijalkowski, Institute of High Pressure Physics (Poland)
Kacper Sierakowski, Institute of High Pressure Physics (Poland)
Slawomir Sakowski, Institute of High Pressure Physics (Poland)
Aneta Sidor, Institute of High Pressure Physics (Poland)
Malgorzata Iwinska, Institute of High Pressure Physics (Poland)
Robert Kucharski, Institute of High Pressure Physics (Poland)
Karolina Grabianska, Institute of High Pressure Physics (Poland)
Tomasz Sochacki, Institute of High Pressure Physics (Poland)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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