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Proceedings Paper

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
Author(s): Saadat M. Mishkat-Ul-Masabih; Andrew A. Aragon; Morteza Monavarian; Ting S. Luk; Daniel F. Feezell
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Paper Abstract

GaN-based vertical-cavity surface-emitting lasers (VCSELs) have drawn interest in recent years for their potential applications in data storage, laser printing, solid-state lighting, optical communications, sensing, and displays. Several research groups have demonstrated electrically injected GaN-based VCSELs utilizing different growth and fabrication techniques to address the many challenges associated with III-nitride materials. One such challenge is fabrication of highquality conductive epitaxial distributed Bragg reflectors (DBRs). A relatively new approach that yields high-index-contrast lattice-matched epitaxial DBRs is to introduce subwavelength air-voids (nanopores) in alternating layers of doped/undoped GaN. These nanoporous layers can be achieved by the controlled anodic electrochemical etching of highly doped n-type GaN in acids. The selective formation of the nanopores in the doped layers effectively lowers the refractive index compared to the adjacent undoped GaN layers, resulting in a refractive index difference of ~0.83, allowing high reflectance (>99%) with only ~16 pairs. Here, we will present electrically injected nonpolar m-plane GaN-based VCSELs with lattice-matched nanoporous GaN bottom DBRs and top dielectric DBRs. Lasing under pulsed operation at room temperature was observed at 409 nm with a linewidth of ~0.6 nm and a maximum output power of ~1.5 mW. The nonpolar m-plane orientation offers low transparency, high material gain, and anisotropic gain characteristics. The VCSELs were linearly polarized with a polarization ratio of ~0.94 and polarization-pinned emission along the a-direction. The mode profiles, thermal properties, and lasing yield of the VCSELs are also discussed.

Paper Details

Date Published: 16 February 2020
PDF: 15 pages
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800I (16 February 2020); doi: 10.1117/12.2545030
Show Author Affiliations
Saadat M. Mishkat-Ul-Masabih, The Univ. of New Mexico (United States)
Andrew A. Aragon, The Univ. of New Mexico (United States)
Morteza Monavarian, The Univ. of New Mexico (United States)
Ting S. Luk, Ctr. for Integrated Nanotechnologies (United States)
Daniel F. Feezell, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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