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Proceedings Paper

Thick HVPE growth of ZnSe on GaAs and OP-GaAs templates for nonlinear frequency conversion (Conference Presentation)

Paper Abstract

We discuss low-pressure HVPE growth of ZnSe on GaAs substrates (~350 µm thick) and on OP-GaAs templates (~115 µm thick) that achieved single-crystalline quality ZnSe layers which will be used to develop OP-ZnSe QPM structures for nonlinear frequency conversion devices. Material characterization techniques including SEM, HR-XRD, XTEM, and PL have been used to verify that the ZnSe grown by HVPE has a superior quality to the commercially available ZnSe substrates. Current focus is to obtain thicknesses beyond 500 µm using plain and OP templates for frequency conversion in the MLWIR.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112640V (9 March 2020); doi: 10.1117/12.2544996
Show Author Affiliations
Shivashankar Vangala, Air Force Research Lab. (United States)
Meagan Parker, Air Force Research Lab. (United States)
KBRwyle (United States)
Duane Brinegar, Air Force Research Lab. (United States)
KBRwyle (United States)
Vladimir Tassev, Air Force Research Lab. (United States)
Michael Snure, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 11264:
Nonlinear Frequency Generation and Conversion: Materials and Devices XIX
Peter G. Schunemann; Kenneth L. Schepler, Editor(s)

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