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Proceedings Paper

In-situ laser interference patterning of MBE growth surfaces
Author(s): Yun Ran Wang; Mark Hopkinson; Im Sik Han; Chao Yuan Jin
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Paper Abstract

Single-pulse laser interference is applied to a Molecular Beam Epitaxy growth chamber to achieve in-situ patterning during the growth of III-V materials, with a focus on producing arrays of III-V quantum dots. We will describe the construction and characterization of the interference system as well as the in-situ patterning results. Pulsed laser interference is shown to strongly interact with the growing surface to produce periodic nanoscale features such as holes and islands, the nature of which is dependent on the local surface energy distribution. We describe a mechanism for the formation of these features in terms of surface diffusion under the influence of the periodic thermal gradient induced by the interference pattern. Nanoislands formed at the interference minima are shown to be ideal sites for quantum dot nucleation.

Paper Details

Date Published: 2 March 2020
PDF: 7 pages
Proc. SPIE 11268, Laser-based Micro- and Nanoprocessing XIV, 112680U (2 March 2020); doi: 10.1117/12.2544992
Show Author Affiliations
Yun Ran Wang, The Univ. of Sheffield (United Kingdom)
Mark Hopkinson, The Univ. of Sheffield (United Kingdom)
Im Sik Han, The Univ. of Sheffield (United Kingdom)
Chao Yuan Jin, The Univ. of Sheffield (United Kingdom)
Zhejiang Univ. (China)

Published in SPIE Proceedings Vol. 11268:
Laser-based Micro- and Nanoprocessing XIV
Udo Klotzbach; Akira Watanabe; Rainer Kling, Editor(s)

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