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Proceedings Paper

Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)
Author(s): David Busse; Elham Fadaly; Victor T. van Lange; Jens Réne Suckert; Alain Dijkstra; Marvin van Tilburg; Claudia Rödl; Philipp Staudinger; Marcel A. Verheijen; Sebastian Kölling; Dorian Ziss; Jürgen Furthmüller; Friedhelm Bechstedt; Julian Stangl; Heinz Schmid; Silvana Botti; Erik P. A. M. Bakkers; Jos E. M. Haverkort; Jonathan J. Finley

Paper Abstract

Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are used as template for SiGe growth. Our approach opens up routes towards photonic band-edge lasers using group-IV NWs. Low-temperature µPL studies of arrays of SiGe NW-arrays reveal strong emission at 0.395eV and linear power dependence for weak excitation levels (P_ex~0.01-1kW/cm^2). For P_ex>4kW/cm^2, a new peak emerges at 0.37eV with an intensity that increases according to ~(P_ex)^5, indicative of stimulated emission close to the photonic band-edge.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010K (9 March 2020); doi: 10.1117/12.2544968
Show Author Affiliations
David Busse, Walter Schottky Institut, Technische Univ. München (Germany)
Elham Fadaly, Technische Univ. Eindhoven (Netherlands)
Victor T. van Lange, Technische Univ. Eindhoven (Netherlands)
Jens Réne Suckert, Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Univ. Jena (Germany)
Alain Dijkstra, Technische Univ. Eindhoven (Netherlands)
Marvin van Tilburg, Technische Univ. Eindhoven (Netherlands)
Claudia Rödl, Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Univ. Jena (Germany)
Philipp Staudinger, IBM Research - Zürich (Switzerland)
Marcel A. Verheijen, Technische Univ. Eindhoven (Netherlands)
Sebastian Kölling, Technische Univ. Eindhoven (Netherlands)
Dorian Ziss, Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Univ. Linz (Austria)
Jürgen Furthmüller, Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Univ. Jena (Germany)
Friedhelm Bechstedt, Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Univ. Jena (Germany)
Julian Stangl, Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Univ. Linz (Austria)
Heinz Schmid, IBM Research - Zürich (Switzerland)
Silvana Botti, Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Univ. Jena (Germany)
Erik P. A. M. Bakkers, Technische Univ. Eindhoven (Netherlands)
Jos E. M. Haverkort, Technische Univ. Eindhoven (Netherlands)
Jonathan J. Finley, Walter Schottky Institut, Technische Univ. München (Germany)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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