Share Email Print

Proceedings Paper

High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation)
Author(s): Xin Yi; Shiyu Xie; Baolai L. Liang; Leh W. Lim; Mukul C. Debnath; Diana L. Huffaker; Chee Hing Tan; John P. R. David

Paper Abstract

AlAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to InP and therefore use InGaAs as the absorption region in a Separate Absorption and Multiplication APD (SAM-APD). The electron and hole ionisation coefficients in this material are very dissimilar and our experiments show that this leads to AlAs0.56Sb0.44 having the lowest excess noise performance of any InP based material system (F = 2.2 at M = 40) reported to date. Simulations suggest that operation at 1550 nm and 25 GB s-1 with a sensitivity of -25.7 dBm is possible in a normal incidence SAM-APD.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11276, Optical Components and Materials XVII, 112760E (10 March 2020); doi: 10.1117/12.2544956
Show Author Affiliations
Xin Yi, The Univ. of Sheffield (United Kingdom)
Shiyu Xie, Cardiff Univ. (United Kingdom)
Baolai L. Liang, Univ. of California, Los Angeles (United States)
Leh W. Lim, The Univ. of Sheffield (United Kingdom)
Mukul C. Debnath, Univ. of California, Los Angeles (United States)
Diana L. Huffaker, Cardiff Univ. (United Kingdom)
Chee Hing Tan, The Univ. of Sheffield (United Kingdom)
John P. R. David, The Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 11276:
Optical Components and Materials XVII
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?