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Proceedings Paper

High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)

Paper Abstract

We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 runs between maintenance while maintaining very fast growth rate up to 4.2micron / hr and low [C] impurity <2E17 cm-3. Another parameter critical to VCSEL is defectivity, where <0.5 defects / cm2 @ >2 micron size have been demonstrated. Correlation of epi and VCSEL device parameters such as threshold current density (Jth) and power conversion efficiency will be discussed.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000L (9 March 2020); doi: 10.1117/12.2544914
Show Author Affiliations
Ronald A. Arif, Veeco Instruments Inc. (United States)
Mark McKee, Veeco Instruments Inc. (United States)
Eric Armour, Veeco Instruments Inc. (United States)
Weimin Dong, Veeco Instruments Inc. (United States)
Alex Zhang, Veeco Instruments Inc. (United States)
Bojan Mitrovic, Veeco Instruments Inc. (United States)
Drew Hanser, Veeco Instruments Inc. (United States)
Ajit Paranjpe, Veeco Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 11300:
Vertical-Cavity Surface-Emitting Lasers XXIV
Luke A. Graham; Chun Lei, Editor(s)

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