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Proceedings Paper

Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs
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Paper Abstract

Low-temperature poly-Si (LTPS) thin films formed by excimer laser annealing (ELA) are used as the channel material for thin film transistors (TFTs), which have an application as switching devices in flat panel displays. It is well known that one of the major problems in TFT manufacturing is the prominent ridges that form on LTPS thin films after ELA due to volume expansion by crystallization, which in turn induces gate leakage current in the TFTs. In this presentation, we report on the use of additional laser irradiation to reduce the height of the ridges and resulting changes in the electrical properties of LTPS-TFTs.

Paper Details

Date Published: 22 January 2020
PDF: 6 pages
Proc. SPIE 11268, Laser-based Micro- and Nanoprocessing XIV, 1126810 (22 January 2020); doi: 10.1117/12.2544910
Show Author Affiliations
Fuminobu Hamano, Kyushu Univ. (Japan)
Akira Mizutani, Kyushu Univ. (Japan)
Kaname Imokawa, Kyushu Univ. (Japan)
Daisuke Nakamura, Kyushu Univ. (Japan)
Tetsuya Goto, Tohoku Univ. (Japan)
Hiroshi Ikenoue, Kyushu Univ. (Japan)

Published in SPIE Proceedings Vol. 11268:
Laser-based Micro- and Nanoprocessing XIV
Udo Klotzbach; Akira Watanabe; Rainer Kling, Editor(s)

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