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Proceedings Paper

Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates
Author(s): Qi Lu; Yi Zhou; Jianxin Chen; Li He; Anthony Krier
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Paper Abstract

In this work, we report interband cascade light emitting diodes (ICLEDs) based on InAs/GaAsSb superlattices emitting around 4.5 μm The ICLED structures were grown on InAs substrates by molecular beam epitaxy, which were composed of InAs/GaAsSb superlattice emitters, InAs/AlAsSb multi-quantum well (MQW) injection regions, and the GaAsSb/AlAsSb MQW tunneling regions. Both 5-stage and 2-stage ICLEDs were fabricated. The devices exhibited high output power, low series resistance and high wall-plug efficiency (WPE). At room temperature, radiances of 0.36 W/cm2 sr and 0.19 W/cm2 sr were achieved from the 5-stage and 2-stage ICLEDs respectively. At 80 K, the output power from the 5-stage ICLED reached 3.56 mW with 350 mA injection current, resulting in a WPE of around 0.5%. The efficiency was largely maintained with increasing injection. The thermal quenching of these ICLEDs from 20 K to 300 K was also significantly less than other types of devices emitting at similar wavelengths. These results demonstrate that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.

Paper Details

Date Published: 26 February 2020
PDF: 7 pages
Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 1128415 (26 February 2020); doi: 10.1117/12.2544811
Show Author Affiliations
Qi Lu, Lancaster Univ. (United Kingdom)
Yi Zhou, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)
Anthony Krier, Lancaster Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 11284:
Smart Photonic and Optoelectronic Integrated Circuits XXII
Sailing He; Laurent Vivien, Editor(s)

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