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Proceedings Paper

Towards cavity-enhanced photodetection in Al-doped BP integrated with 2D photonic crystal and waveguide for mid-IR wavelengths
Author(s): Asif Bilal; Osama Jalil; Shahzad Ahmad; Abdullah Nafis Khan; Usman Younis
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Paper Abstract

The design of an integrated Al-doped BP p-n homojunction with 2D Photonic crystal coupled with strip waveguide in SOI to enhance Photodetection for 3.7 μm is presented. Peak-Q of 1600 has been achieved by systematically optimizing the radius of the circularly shaped unit cell and period by performing 3D FDTD simulations. The thickness of the BP layer is calculated to be 17 nm for 3.7 μm absorption. The energy band structure and density-of-states for the monolayers are calculated using quantum expresso. The available 400 nm thick SOI lithography, in a standard multiproject wafer run, can be employed to ac hive the monolithic integration of our designed photodetector for mid-IR wavelengths. We believe this platform could help in realization of chip scale system for sensing application, optical wireless applications, interconnects (on-chip optical) and phased array for LIDAR applications.

Paper Details

Date Published: 18 February 2020
PDF: 6 pages
Proc. SPIE 11282, 2D Photonic Materials and Devices III, 112820X (18 February 2020); doi: 10.1117/12.2544666
Show Author Affiliations
Asif Bilal, Information Technology Univ. of the Punjab (Pakistan)
Osama Jalil, Information Technology Univ. of the Punjab (Pakistan)
Shahzad Ahmad, Information Technology Univ. of the Punjab (Pakistan)
Abdullah Nafis Khan, Information Technology Univ. of the Punjab (Pakistan)
Usman Younis, Information Technology Univ. of the Punjab (Pakistan)

Published in SPIE Proceedings Vol. 11282:
2D Photonic Materials and Devices III
Arka Majumdar; Carlos M. Torres Jr.; Hui Deng, Editor(s)

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