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Proceedings Paper

Fabrication of a laser diode at 1600 nm with InAs quantum dots using a digital embedding method on an InP(311)B substrate (Conference Presentation)
Author(s): Kouichi Akahane; Hiroyuki Yamamoto; Atsushi Matsumoto; Toshimasa Umezawa; Hideyuki Sotobayashi; Naokatsu Yamamoto

Paper Abstract

In this study, we fabricated QD laser diodes using a digital embedding method (DEM) in which InAs QDs were embedded in an InGaAs/InAlAs superlattice whose miniband acts as an effective barrier for the QDs. We stacked 15 QD layers by using DEM with four monolayers in each InGaAs/InAlAs superlattice. The stripe laser structures were fabricated using conventional laser diode processes. The laser with a 600-µm cavity showed lasing at 1600 nm with a threshold current of 474 mA. The internal loss of this laser was 16.2 cm-1, which was similar that of the laser that uses a conventional quaternary InGaAlAs barrier material.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130108 (9 March 2020); doi: 10.1117/12.2544589
Show Author Affiliations
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Hiroyuki Yamamoto, Aoyama Gakuin Univ. (Japan)
Atsushi Matsumoto, National Institute of Information and Communications Technology (Japan)
Toshimasa Umezawa, National Institute of Information and Communications Technology (Japan)
Hideyuki Sotobayashi, Aoyama Gakuin Univ. (Japan)
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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