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Proceedings Paper

Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics
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Paper Abstract

Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ε-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ε-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (¯603)) and 0.6° (ε-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ε-Ga2O3 buffer layer, as well as between the ε-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.

Paper Details

Date Published: 5 March 2020
PDF: 5 pages
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810G (5 March 2020); doi: 10.1117/12.2544427
Show Author Affiliations
Nasir Alfaraj, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Kuang-Hui Li, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Chun Hong Kang, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Laurentiu Braic, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Tien Khee Ng, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Boon S. Ooi, King Abdullah Univ. of Science and Technology (Saudi Arabia)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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