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Proceedings Paper

NIR optical properties of SWCNTs based on ab-initio calculations and the transfer matrix method
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Paper Abstract

In this work, we investigate the optical properties of different semi-conducting single wall CNTs (Sc-SWCNTs) using abintio simulations and the transfer matrix method (TMM). The simulated results are compared with spectroscopic experimental measurements as well. The real and imaginary parts of the refractive indices in near-infrared (NIR) from 1.2 up to 2.5 μm are calculated, and then used to feed multi-layered homogeneous thin-film utilizing the TMM to calculate the reflectivity, transmissivity, and absorptivity of the Sc-SWCNTs thin-films versus wavelength in the NIR region. The spectral reflectivity is measured using an integrating sphere that collects the overall reflections diffused into the different directions and then couple it to a NIR spectrometer. The measured reflectance spectra shows good agreement with the theoretical predictions. The results suggest that Sc-SWCNTs thin films are highly absorbing over the NIR range due to the distribution of various bandgaps of the CNTs with different diameters.

Paper Details

Date Published: 2 March 2020
PDF: 7 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112740Z (2 March 2020); doi: 10.1117/12.2544382
Show Author Affiliations
Ahmed Saeed, Electronics Research Institute (Egypt)
Ain-Shams Univ. (Egypt)
Yasser M. Sabry, Ain Shams Univ. (Egypt)
Si-Ware Systems (Egypt)
Heba A. Shawkey, Electronics Research Institute (Egypt)
Diaa Khalil, Ain Shams Univ. (Egypt)
Si-Ware Systems (Egypt)

Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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