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Proceedings Paper

Characterization of micro-pixelated InGaP/AlGaInP quantum well structures
Author(s): Younes Boussadi; Névine Rochat; Jean-Paul Barnes; Badhise Ben Bakir; Philippe Ferrandis; Bruno Masenelli; Christophe Licitra
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Paper Abstract

In this paper, we present a structural and optical study on micro-pixelated InGaP/AlGaInP quantum well structures with different pixel sizes down to 6 μm and a red emission at 636 nm. Temperature-dependent photoluminescence and cathodoluminescence cartographies were coupled to observe the emission homogeneity at the pixel scale and to study the impact of non-radiative recombination from sidewall defects. We deduced that micro-LEDs are impacted by surface recombination and we estimated the thermal quenching of photoluminescence related to defects. At low temperatures, a stronger luminescence was also observed from the pixel edges due to the diffusion coefficient or a geometric effect. Finally, the study was completed by a TOF-SIMS analysis in order to provide information about material composition homogeneity.

Paper Details

Date Published: 25 February 2020
PDF: 8 pages
Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130221 (25 February 2020); doi: 10.1117/12.2544350
Show Author Affiliations
Younes Boussadi, Univ. Grenoble Alpes, CEA-LETI (France)
Névine Rochat, Univ. Grenoble Alpes, CEA-LETI (France)
Jean-Paul Barnes, Univ. Grenoble Alpes, CEA-LETI (France)
Badhise Ben Bakir, Univ. Grenoble Alpes, CEA-LETI (France)
Philippe Ferrandis, Univ. de Toulon, Univ. Grenoble Alpes, CNRS (France)
Bruno Masenelli, Univ. de Lyon (France)
Christophe Licitra, Univ. Grenoble Alpes, CEA-LETI (France)

Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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