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Proceedings Paper

Gallium pollution in an AIXTRON close coupled showerhead reactor and its serious effect on the growth process stability of InGaN layers for optoelectronic applications (Conference Presentation)
Author(s): Mrad Mrad; Christophe Licitra; Amelie Dussaigne; Victor Yon; Jerome Richy; Matthieu Lafossas; Joel Kanyandekwe; Guy Feuillet; Matthew Charles

Paper Abstract

InGaN-based devices have attracted a lot of attention, thanks to versatile optoelectronic applications. We show that the growth of these layers in an AIXTRON Close Coupled Showerhead is complicated due to the presence of gallium pollution in the chamber after the growth of GaN buffer layers. This pollution reacts with the TMIn precursor in the growth chamber to give thicker InGaN layers with reduced indium incorporation. We overcame this problem by limiting the presence of the metallic gallium in the growth chamber, resulting in more stable and predictable growth of InGaN layers.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128007 (10 March 2020); doi: 10.1117/12.2544282
Show Author Affiliations
Mrad Mrad, CEA-Grenoble (France)
Christophe Licitra, CEA-Grenoble (France)
Amelie Dussaigne, CEA-Grenoble (France)
Victor Yon, CEA-Grenoble (France)
Jerome Richy, CEA-Grenoble (France)
Matthieu Lafossas, CEA-Grenoble (France)
Joel Kanyandekwe, CEA-Grenoble (France)
Guy Feuillet, CEA-Grenoble (France)
Matthew Charles, CEA-Grenoble (France)

Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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