Share Email Print

Proceedings Paper

Operation of a novel, dual function thin slab ultrafast amplifier at 1030nm, 515nm, and 343nm
Author(s): Jason R. Lee; Rolf B. Birch; Benjamin Fulford; David Birkin
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Industrial applications increasingly demand femtosecond and picosecond pulse duration laser systems with a range of wavelengths from the near infrared to the ultraviolet. This paper reports a dual function thin slab femtosecond amplifier system operating at a range of wavelengths via frequency conversion. A Yb:YAG thin slab amplifier was demonstrated that incorporates both the pre-amplifier and power amplifier functions in a single crystal. To ensure efficient, homogenous pumping of the thin slab a novel diode bar imaging technique is used. The combination of the homogenous pumping and the unique amplifier architecture enables average output powers < 200 W to be maintained across a range of pulse repetition frequencies from 1 MHz to 40 MHz with a pulse duration of 50 ps at a wavelength of 1030 nm and M2 ~ 1.2. The pulse was compressed to a duration of 900 ± 100 fs with a compressor efficiency of < 90 %. A modified LXR100 system which is based on this technology was used as the fundamental 1030 nm source, with output powers up to 130 W, from 1 MHz – 10 MHz and pulse durations in the 900 fs regime. Second harmonic generation of 515 nm was achieved by coupling the beam into a type-1 critically phase matched LBO crystal to enable efficient conversion whilst avoiding damage. Second harmonic generation of 515 nm to < 95 W at a conversion efficiency of ~74 % and pulse energy of < 96 μJ and M2 < 1.3 was achieved. Further wavelength conversion was undertaken by coupling the 515 nm and unconverted 1030 nm output into a second LBO crystal for third harmonic generation. Type-1 and type-2 phasematching configurations for third harmonic generation were investigated, with an output power of < 20 W and pulse energy of < 20 μJ achieved at 343 nm with a conversion efficiency with respect to incident 1030 nm of < 21 % for both configurations.

Paper Details

Date Published: 21 February 2020
PDF: 9 pages
Proc. SPIE 11259, Solid State Lasers XXIX: Technology and Devices, 112591H (21 February 2020); doi: 10.1117/12.2544278
Show Author Affiliations
Jason R. Lee, Luxinar Ltd. (United Kingdom)
Rolf B. Birch, Luxinar Ltd. (United Kingdom)
Benjamin Fulford, Luxinar Ltd. (United Kingdom)
David Birkin, Luxinar Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 11259:
Solid State Lasers XXIX: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?