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Proceedings Paper

Visualization of defects in nitride semiconductors by electron channeling (Conference Presentation)
Author(s): Carol Trager-Cowan; Aeshah Alasmari; William Avis; Jochen Bruckbauer; Paul Edwards; Ben Hourahine; Albes Kotzai; Gunnar Kusch; Robert Martin; Ryan McDermott; G. Naresh-Kumar; M. Nouf-Allehiani; Elena Pascal; David Thomson; Dale Waters; Peter Parbrook; Arantxa Vilalta-Clemente; Angus Wilkinson; Ken Mingard; Aimo Winkelmann

Paper Abstract

The diffraction based scanning electron microscopy (SEM) technique of electron channeling contrast imaging (ECCI) provides rapid and non-destructive information on defects on length scales from tens of nanometres to tens of micrometres. ECCI may be complemented by electron backscatter diffraction (EBSD) and hyperspectral cathodoluminescence imaging (CL). EBSD provides orientation, phase, polarity and strain information, whilst CL reveals the influence of phase, composition, strain and defects on luminescence. I will discuss our recent investigations of phase, composition and polarity, the type, density and distribution of defects and the distribution of strain in a range of nitride semiconductor structures.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128008 (10 March 2020); doi: 10.1117/12.2544228
Show Author Affiliations
Carol Trager-Cowan, Univ. of Strathclyde (United Kingdom)
Aeshah Alasmari, Univ. of Strathclyde (United Kingdom)
William Avis, Univ. of Strathclyde (United Kingdom)
Jochen Bruckbauer, Univ. of Strathclyde (United Kingdom)
Paul Edwards, Univ. of Strathclyde (United Kingdom)
Ben Hourahine, Univ. of Strathclyde (United Kingdom)
Albes Kotzai, Univ. of Strathclyde (United Kingdom)
Gunnar Kusch, Univ. of Strathclyde (United Kingdom)
Robert Martin, Univ. of Strathclyde (United Kingdom)
Ryan McDermott, Univ. of Strathclyde (United Kingdom)
G. Naresh-Kumar, Univ. of Strathclyde (United Kingdom)
M. Nouf-Allehiani, Univ. of Strathclyde (United Kingdom)
Elena Pascal, Univ. of Strathclyde (United Kingdom)
David Thomson, Univ. of Strathclyde (United Kingdom)
Dale Waters, Univ. of Strathclyde (United Kingdom)
Peter Parbrook, Tyndall National Institute (Ireland)
Arantxa Vilalta-Clemente, Univ. of Oxford (United Kingdom)
Angus Wilkinson, Univ. of Oxford (United Kingdom)
Ken Mingard, National Physical Lab. (United Kingdom)
Aimo Winkelmann, Laser Zentrum Hannover e.V. (Germany)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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