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Proceedings Paper

A high power InGaN laser array with built-in smile suppression structure
Author(s): Shinichiro Nozaki; Masao Kawaguchi; Takahiro Nibu; Hiroyuki Hagino; Atsunori Mochida; Takashi Kano; Shinichi Takigawa; Takuma Katayama; Tsuyoshi Tanaka; Kouji Oomori
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Paper Abstract

A smile-suppressed high-power InGaN laser array has been developed for a high beam quality material processing light source. The smile effect becomes apparent especially in InGaN laser array with large chip curvature due to lattice mismatch of epitaxial growth layers. To reduce the smile, periodic grooves are introduced to the epitaxial layers for removing the origin of strain. It also enables a two-dimensional strain management of remaining epitaxial layers. This technology improves the chip curvature within micron range, i.e. as small as 0.3 μm in a 9 mm-width InGaN laser array. We have successfully realized reducing the smile to 0.4 μm without degrading the laser light output characteristics.

Paper Details

Date Published: 2 March 2020
PDF: 7 pages
Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620S (2 March 2020); doi: 10.1117/12.2544184
Show Author Affiliations
Shinichiro Nozaki, Panasonic Corp. (Japan)
Masao Kawaguchi, Panasonic Corp. (Japan)
Takahiro Nibu, Panasonic Corp. (Japan)
Hiroyuki Hagino, Panasonic Corp. (Japan)
Atsunori Mochida, Panasonic Corp. (Japan)
Takashi Kano, Panasonic Corp. (Japan)
Shinichi Takigawa, Panasonic Corp. (Japan)
Takuma Katayama, Panasonic Corp. (Japan)
Tsuyoshi Tanaka, Panasonic Corp. (Japan)
Kouji Oomori, Panasonic Smart Factory Solutions Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 11262:
High-Power Diode Laser Technology XVIII
Mark S. Zediker, Editor(s)

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