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Proceedings Paper

Controlling crystal growth of non-toxic Bismuth iodide (BiI3) semiconducting material for efficient photovoltaics
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Paper Abstract

High absorption coefficient, suitable band gap, and high electron mobility makes non-toxic 2D bismuth iodide (BiI3) a promising alternative to efficient, toxic perovskites and inorganic solar cells containing lead (Pb). In this work, we successfully synthesized, controlled, and optimized the crystal orientation of BiI3 crystals grown directly on a transparent conductive substrate using a custom-built close space sublimation (CSS) method. Morphology characterization by scanning electron microscopy (SEM) confirms the controlled morphology of BiI3 crystals. Record photoexcited carrier lifetime of 0.6 ns was characterized by time-resolved photoluminescence spectroscopy for the optimized vertical BiI3 crystals. The photoluminescence confirmed the band gap of the BiI3 film to be 1.82 ev which is a suitable band gap for photovoltaic application. The optimized vertical BiI3 crystals device showed a power conversion efficiency of 0.6% due to the fact that the optimized vertically oriented crystals allowed us to harness the high in-plane electron mobility of BiI3. Higher efficiencies can be obtained by further optimizing the electron and hole transport layers in our PV device. This work paves the way for controlling the orientation and morphology of BiI3 for efficient solar cells by using a facile, scalable, and transfer-free CSS method.

Paper Details

Date Published: 3 March 2020
PDF: 9 pages
Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750H (3 March 2020); doi: 10.1117/12.2544043
Show Author Affiliations
M. Masroor, Worcester Polytechnic Institute (United States)
T. Yan, Worcester Polytechnic Institute (United States)
J. McRae, Worcester Polytechnic Institute (United States)
E. Molstad, Worcester Polytechnic Institute (United States)
R. Rivas, Worcester Polytechnic Institute (United States)
E. Ruano, Worcester Polytechnic Institute (United States)
A. McClelland, Harvard Univ. (United States)
P. M. Rao, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 11275:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
Alexandre Freundlich; Masakazu Sugiyama; Stéphane Collin, Editor(s)

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