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Proceedings Paper

Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)
Author(s): A.B.M. Hamidul Islam; Dong-Soo Shin; Joon Seop Kwak; Jong-In Shim

Paper Abstract

There has been a lack of research for proper understanding of defects relaxing the strained lattice of InGaN/(Al)GaN quantum wells. This motivates us to find the relation among the defects, the piezoelectric field (FPZ), and the bandgap shrinkage under high injection. In this work, five similar-structure near-ultraviolet (NUV) light-emitting diodes (LEDs) are used to find systematically that the increase of point defects in the sample decreases both the peak wavelength and FPZ. This effect clearly indicates that the strain relaxation is induced by defects. We propose a model that consistently explain the observed changes in macroscopic characterizations of NUV LEDs.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128014 (10 March 2020); doi: 10.1117/12.2544036
Show Author Affiliations
A.B.M. Hamidul Islam, Sunchon National Univ. (Korea, Republic of)
Dong-Soo Shin, Hanyang Univ. (Korea, Republic of)
Joon Seop Kwak, Sunchon National Univ. (Korea, Republic of)
Jong-In Shim, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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