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Proceedings Paper

Towards 2D fully integrated array of InGaN laser diodes (Conference Presentation)

Paper Abstract

Our goal is to fabricate a laser diode 2D array which combines the properties of both VCSEL and edge emitting laser. Proposed light emitter will have a horizontal cavity with 450 deflectors. The role of these deflectors would be to deflect light perpendicular to the cavity, achieving vertical out-coupling. The most challenging part of this project is the fabrication of the micro-mirrors which act as both as beam deviating mirrors and cavity forming mirrors. Owing to the excellent thermal conductivity of GaN substrates the properties of such a 2D array should be better than of conventional nitride laser diode arrays, not even mentioning nitride-based stacked bars systems. In this paper I will describe our new device design and processing, giving insight to its possible applications and advantages over simple light emitting laser diode.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800R (10 March 2020); doi: 10.1117/12.2544015
Show Author Affiliations
Piotr Perlin, Institute of High Pressure Physics (Poland)
Anna Kafar, Institute of High Pressure Physics (Poland)
Kiran Saba, Institute of High Pressure Physics (Poland)
Krzysztof Gibasiewicz, Institute of High Pressure Physics (Poland)
Agata Bojarska, Institute of High Pressure Physics (Poland)
Dario Schiavon, TopGaN Ltd. (Poland)

Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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