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Proceedings Paper

Progress in high-power broadband GaSb-based superluminescent diodes emitting at 2-3 um (Conference Presentation)
Author(s): Nouman Zia; Jukka Viheriala; Eero Koivusalo; Antti Aho; Mircea Guina

Paper Abstract

We present the state-of-the-art electrically pumped single transverse-mode superluminescent diodes (SLDs) emitting in the 2 – 3 µm wavelength range at room temperature. The structures were fabricated by MBE to include two GaSb-based quantum wells and a double-pass ridge waveguide architecture. A cavity suppression element was used for avoiding lasing at high current. Highest power was obtained for SLDs around 2 µm, exceeding 120 mW in CW and > 300 mW in pulsed operation, with spectral width of ~ 40 nm. SLDs around 2.60 µm emitted a record 15 mW output power and exhibited ~ 80 nm spectral width under pulsed operation. Wavelength extension towards 3 µm is discussed.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130210 (9 March 2020); doi: 10.1117/12.2544007
Show Author Affiliations
Nouman Zia, Tampere Univ. (Finland)
Jukka Viheriala, Tampere Univ. (Finland)
Eero Koivusalo, Tampere Univ. (Finland)
Antti Aho, Tampere Univ. (Finland)
Mircea Guina, Tampere Univ. (Finland)


Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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