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Proceedings Paper

Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN
Author(s): S. Copelman; H. Austin; D. Timmerman; J. D. Poplawsky; M. Waite; J. Tatebayashi; S. Ichikawa; Y. Fujiwara; V. Dierolf; B. Mitchell
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Paper Abstract

Eu-doped GaN is a promising material with a wide array of potential applications in optoelectronics, optogenetics, micro displays and quantum computing. While this system has been the subject of intense investigation for the last two decades, several questions still remain about certain aspects of its optical properties, such as the polarization dependence of the optical transitions, and the coupling between the 4f-electron configuration and bulk phonons, as well and the appearance of local phonon modes. Moreover, the origin of certain emission peaks remains under debate in the literature. In this proceeding, the results of a systematic series of “site-selective” photoluminescence measurements are presented, where the properties of pulsed and continuous-wave laser excitation, such as polarization and intensity, were controlled.

Paper Details

Date Published: 25 February 2020
PDF: 14 pages
Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113021Z (25 February 2020); doi: 10.1117/12.2544005
Show Author Affiliations
S. Copelman, West Chester Univ. (United States)
H. Austin, Lehigh Univ. (United States)
D. Timmerman, Osaka Univ. (Japan)
J. D. Poplawsky, Oak Ridge National Lab. (United States)
M. Waite, West Chester Univ. (United States)
J. Tatebayashi, Osaka Univ. (Japan)
S. Ichikawa, Osaka Univ. (Japan)
Y. Fujiwara, Osaka Univ. (Japan)
V. Dierolf, Lehigh Univ. (United States)
B. Mitchell, West Chester Univ. (United States)
Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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