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Proceedings Paper

Hybrid integration of high-speed MUTC-PD on SOI
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Paper Abstract

A hybrid integration method of back-illuminated modified uni-traveling carrier photodiode (MUTC-PD) on silicon-oninsulator (SOI) is demonstrated. Compared with the die-to-die bonding of unprocessed III-V die, this hybrid bonding method, implemented by a flip-chip bonding machine, is more convenient and flexible, thus providing a more direct path to utilizing high-speed PDs in integrated microwave photonics on SOI. As a result, the integrated photodetector exhibits a 3-dB bandwidth of 30 GHz, showing no degradation compared with the bandwidth before bonding.

Paper Details

Date Published: 20 December 2019
PDF: 5 pages
Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 112091C (20 December 2019); doi: 10.1117/12.2543930
Show Author Affiliations
Enfei Chao, Tsinghua Univ. (China)
Bing Xiong, Tsinghua Univ. (China)
Changzheng Sun, Tsinghua Univ. (China)
Zhibiao Hao, Tsinghua Univ. (China)
Lai Wang, Tsinghua Univ. (China)
Jian Wang, Tsinghua Univ. (China)
Yanjun Han, Tsinghua Univ. (China)
Hongtao Li, Tsinghua Univ. (China)
Jiadong Yu, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 11209:
Eleventh International Conference on Information Optics and Photonics (CIOP 2019)
Hannan Wang, Editor(s)

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