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Proceedings Paper

Towards a Si foundry-compatible GaN-on-Si MMIC process on 200mm Si with Cu damascene BEOL (Conference Presentation)
Author(s): Jeffrey LaRoche

Paper Abstract

In 2013 Raytheon began to integrate submicron (≤0.25 µm gate) 200mm GaN on Si HEMT processes within a commercial CMOS Si Foundry environment. When fully realized, these processes will demonstrate multi GHz GaN on Si MMICs by leveraging a fully subtractively processed transistor coupled with multi-level copper based back end of line (Cu BEOL) processes. This work provides a status update on the progress towards that goal.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112801G (10 March 2020); doi: 10.1117/12.2543913
Show Author Affiliations
Jeffrey LaRoche, Raytheon Integrated Defense Systems (United States)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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