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Proceedings Paper

Influence of mechanical bending strain on bias-stress stability of flexible top-gate p-type SnO TFTs
Author(s): I-Chun Cheng; Shu-Ming Hsu; Wei-Chen Lin; Jian-Zhang Chen
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Paper Abstract

In this paper, flexible coplanar top-gate p-type SnO TFTs are demonstrated. The TFT performance was optimized by adjusting the post-deposition annealing temperature of the SnO channel. The on/off current ratio of the TFT first improves and then degrades as the channel annealing temperature increases. With an optimized annealing temperature of 175C, the flexible SnO TFT exhibits a field-effect mobility of 0.71 cm2/V-s, threshold voltage of 5.2 V, subthreshold swing of 1.6 V/decade, and on/off current ratio of 1.6 x 103. The gate-bias stress stability of the optimized TFT was then investigated. When the TFT is at flat state, the threshold voltage shifts after bias-stressed at +10 V and -10 V for 10000 s are 0.2 V and nearly 0 V, respectively. The electrical stability degrades slightly when the TFT is subjected to both mechanical tensile and compressive strains. At a compressive strain of 0.25%, the threshold voltage shifts increase to 0.8 V and -0.3 V for positive and negative bias stress, respectively. At a tensile strain of 0.25%, the corresponding values are 0.7 V and -0.2 V. Compared with unpassivated bottom-gate SnO TFTs, the gate-bias stress stability is greatly improved.

Paper Details

Date Published: 26 February 2020
PDF: 6 pages
Proc. SPIE 11304, Advances in Display Technologies X, 113040K (26 February 2020); doi: 10.1117/12.2543792
Show Author Affiliations
I-Chun Cheng, National Taiwan Univ. (Taiwan)
Shu-Ming Hsu, National Taiwan Univ. (Taiwan)
Wei-Chen Lin, National Taiwan Univ. (Taiwan)
Jian-Zhang Chen, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 11304:
Advances in Display Technologies X
Jiun-Haw Lee; Qiong-Hua Wang; Tae-Hoon Yoon, Editor(s)

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