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Proceedings Paper

Hydrogen density-of-states in b-Ga2O3 (Conference Presentation)
Author(s): Norbert H. Nickel; Encarnacion G. G. Villora; Kiyoshi Shimamura; Jörg Rappich

Paper Abstract

In this paper, we present an experimental study of hydrogen (H) and deuterium (D) in single crystal and polycrystalline b-Ga2O3. H or D was introduced into the specimens using ampoule passivation at elevated temperatures. The samples were characterized with infrared absorption and gas effusion measurements. As-grown single crystal b-Ga2O3 contains a residual H concentration of about 1019 cm-3 and exhibits a local vibrational mode at 3437.6 cm-1 that has been attributed to O – H. Polycrystalline b-Ga2O3 thin-films were grown by pulsed laser deposition. Hydrogen effusion measurements show that these samples contain H concentrations of up to about 1020 cm-3. From the hydrogen effusion spectra, the H chemical potential was determined as a function of the H concentration, which can be related to the H density-of-states distribution.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128103 (10 March 2020); doi: 10.1117/12.2543778
Show Author Affiliations
Norbert H. Nickel, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
Encarnacion G. G. Villora, National Institute for Materials Science (Japan)
Kiyoshi Shimamura, National Institute for Materials Science (Japan)
Jörg Rappich, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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