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Proceedings Paper

Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)
Author(s): Matthew P. Halsall; Michelle Vaqueiro Contreras; Vladimir P. Markevich; Jose Coutinho; Paulo Santos; Iain F. Crowe; Ian Hawkins; Stanislau B. Lastovskii; Leonid I. Murin; Anthony R. Peaker

Paper Abstract

For 40 years it has been deduced that the presence of Boron and Oxygen in silicon causes the formation of a non-radiative recombination centre, without any consensus as to its exact nature. Here we report the observation, using deep level transient spectroscopy and photoluminescence of the conversion of a deep boron-di-oxygen-related donor trapping state into a shallow acceptor under the action of light or injected carriers. Using ab initio modelling, we propose structures of the B-O2 defect which match the experimental findings. Implications of the presence of this defect, particularly on its deep donor (carrier trapping) configuration, on silicon photodetectors is discussed.

Paper Details

Date Published: 9 March 2020
Proc. SPIE 11285, Silicon Photonics XV, 112850Z (9 March 2020); doi: 10.1117/12.2543773
Show Author Affiliations
Matthew P. Halsall, The Univ. of Manchester (United Kingdom)
Michelle Vaqueiro Contreras, The Univ. of Manchester (United Kingdom)
The Univ of New South Walesa (Australia)
Vladimir P. Markevich, The Univ. of Manchester (United Kingdom)
Jose Coutinho, Univ. de Aveiro (Portugal)
Paulo Santos, Univ. de Aveiro (Portugal)
Iain F. Crowe, The Univ. of Manchester (United Kingdom)
Ian Hawkins, The Univ. of Manchester (United Kingdom)
Stanislau B. Lastovskii, National Academy of Sciences of Belarus (Belarus)
Leonid I. Murin, National Academy of Sciences of Belarus (Belarus)
Anthony R. Peaker, The Univ. of Manchester (United Kingdom)

Published in SPIE Proceedings Vol. 11285:
Silicon Photonics XV
Graham T. Reed; Andrew P. Knights, Editor(s)

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