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Proceedings Paper

Enabling low cost QCL by large scale fabrication on CMOS pilot line
Author(s): J. G. Coutard; M. Brun; M. Fournier; O. Lartigue; F. Fedeli; G. Maisons; J. M. Fedeli; S. Nicoletti; M. Carras; L. Duraffourg
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Paper Abstract

The costs of manufacturing QCL are still a major bottleneck for the adoption of this technology for chemical sensing. The integration of MIR sources on Si substrate based on CMOS technology paves the way for high-volume low-cost fabrication. Furthermore, the use of Si-based fabrication platform open the way to the co-integration of QCL MIR sources with Si-based waveguides, allowing realization optical sensors fully integrated on planar substrate. We report the fabrication of DFB QCL sources operating at 7.4μm on silicon substrate within 200 mm CMOS/MEMS pilot line. To do so, we have developed an appropriate fabrication process flow that fully respects the design and the process rules of a standard CMOS manufacturing line. Moreover, we have developed wafer level electro-optic characterization on prober station. The characterizations done at wafer level on thousands devices have demonstrated average threshold current densities close to between 3 kA/cm2 and 2.5 kA/cm2 with a relative dispersion around 5%. The optical power can reach 1 mW at ambient temperature, 1.5% duty cycle. This fabrication run achieves performance at the state of the art, that are comparable with those of QCL fabricated on InP substrate. With a yield of 98% on the wafer central fields, this work give perspectives to address application fields needing low cost MIR laser sources.

Paper Details

Date Published: 31 January 2020
PDF: 7 pages
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128807 (31 January 2020); doi: 10.1117/12.2543693
Show Author Affiliations
J. G. Coutard, Univ. Grenoble Alpes, CEA-LETI (France)
M. Brun, mirSense (France)
M. Fournier, Univ. Grenoble Alpes, CEA-LETI (France)
O. Lartigue, Univ. Grenoble Alpes, CEA-LETI (France)
F. Fedeli, Univ. Grenoble Alpes, CEA-LETI (France)
G. Maisons, mirSense (France)
J. M. Fedeli, Univ. Grenoble Alpes, CEA-LETI (France)
S. Nicoletti, Univ. Grenoble Alpes, CEA-LETI (France)
M. Carras, mirSense (France)
L. Duraffourg, Univ. Grenoble Alpes, CEA-LETI (France)

Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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