Share Email Print
cover

Proceedings Paper

Dislocation density reduction in (101 1 ) GaN at a high temperature using tri-halide vapor phase epitaxy
Author(s): Kenji Iso; Shoma Ohtaki; Erina Miyata; Yuka Kido; Hisashi Murakami; Akinori Koukitu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The dependence of growth temperature for the epitaxial films grown by tri-halide vapor phase epitaxy (THVPE) on the crystal characteristics, such as the surface morphology, the full width at half maximum (FWHM), the threading dislocation density (TDD), the impurity concentration, and the photoluminescence (PL) was investigated. The epitaxial films grown at relatively high growth temperature of 1300-1350 °C showed that the crystal quality, such as FWHM and TDD retained that for the used substrate. The near-band-edge emission for PL for 1300-1350 °C growth showed lager intensities due to low nonradiative recombination center (NRC). Moreover, the epitaxial growth on the supercritical acidic ammonia technology (SCAAT™) substrate was demonstrated. The TDD was as low as 2 × 104 cm-2, which indicated that the epilayer grown by THVPE retained the superior crystal quality of SCAAT™.

Paper Details

Date Published: 16 February 2020
PDF: 8 pages
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128009 (16 February 2020); doi: 10.1117/12.2543661
Show Author Affiliations
Kenji Iso, Tokyo Univ. of Agriculture and Technology (Japan)
Mitsubishi Chemical Corp. (Japan)
Shoma Ohtaki, Tokyo Univ. of Agriculture and Technology (Japan)
Erina Miyata, Tokyo Univ. of Agriculture and Technology (Japan)
Yuka Kido, Tokyo Univ. of Agriculture and Technology (Japan)
Hisashi Murakami, Tokyo Univ. of Agriculture and Technology (Japan)
Akinori Koukitu, Tokyo Univ. of Agriculture and Technology (Japan)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray