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Proceedings Paper

2D-material-enabled multifunctional mid-IR optoelectronics
Author(s): Skylar Deckoff-Jones; Yixiu Wang; Hongtao Lin; Wenzhuo Wu; Juejun Hu
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Paper Abstract

New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuss the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glass (ChG) photonic platform.

Paper Details

Date Published: 26 February 2020
PDF: 10 pages
Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 112841U (26 February 2020); doi: 10.1117/12.2543619
Show Author Affiliations
Skylar Deckoff-Jones, Massachusetts Institute of Technology (United States)
Yixiu Wang, Purdue Univ. (United States)
Hongtao Lin, Massachusetts Institute of Technology (United States)
Wenzhuo Wu, Purdue Univ. (United States)
Juejun Hu, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 11284:
Smart Photonic and Optoelectronic Integrated Circuits XXII
Sailing He; Laurent Vivien, Editor(s)

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