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Proceedings Paper

Carrier lifetime of black silicon as a photoconductor
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Paper Abstract

Photoconducting properties of heavily doped black silicon (BSi) fabricated by laser-chemical etching method have been investigated. BSi is used as a photoconductor in the study of carrier transport, photo response and minority carrier lifetime of the BSi material. It is found that the BSi is a good photoconductor with enhanced absorption in NIR from the density of states from the cone like spikes on 2 D surface. Metal contacts can be easily made by inserting metal stripes onto the BSi surface due to its high conductivity. Photocurrent spectra were measured under different voltages in the wavelength range 300 nm ~ 1300 nm. From the linear relationship between the photocurrent and the voltage, the minority carrier lifetime is determined to be about 171 μs for an electron density of 7x1017 cm-3 , which is more than 17 times as long as that for n-type silicon. The experimental results demonstrates that the BSi is a suitable material for solar cells not only as absorber but also as conductor.

Paper Details

Date Published: 2 March 2020
PDF: 6 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112741Y (2 March 2020); doi: 10.1117/12.2543587
Show Author Affiliations
Shengkun Zhang, City Univ. of New York (United States)
Robert R. Alfano, City Univ. of New York (United States)


Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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