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Proceedings Paper

High-sensitivity plasmo-photonic interferometric sensors on a chip
Author(s): E. Chatzianagnostou; A. Manolis; G. Dabos; D. Ketzaki; B. Chmielak; A. L. Giesecke; C. Porschatis; P. J. Cegielski; S. Suckow; L. Markey; J.-C. Weeber; A. Dereux; S. Schrittwieser; R. Heer; N. Pleros; D. Tsiokos
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Paper Abstract

Optical refractive index (RI) sensors exploiting selective co-integration of plasmonics with silicon photonics in Lab-on-achip configurations are expected to disrupt Point-of-Care (POC) diagnostics, delivering performance and economic breakthroughs. Propagating surface-plasmon-polariton modes offer superior sensitivity due to their extreme overlap with the surrounding medium. In parallel, low-loss photonics act as the hosting platform with which the plasmonic losses can be sustained while allowing for multiplexed layouts via in-plane SPP excitation schemes. However, merging plasmonics with silicon photonics in a cost-effective manner, requires a truly CMOS-compatible manufacturing process. Herein, we demonstrate experimentally, the highest bulk-sensitivity among all the plasmo-photonic interferometric RI sensors, while taking the leap forward in the development of a CMOS-manufactured plasmo-photonic sensing platform merging Si3N4 photonics and aluminum plasmonics. The proposed structure relies on a butt-coupled interface between Si3N4 waveguides and a 70 μm long plasmonic stripe, deployed in one branch of a Mach-Zehnder Interferometer (MZI) serving as the sensing transducer that detects local changes in the refractive index. The lower MZI arm (reference arm) exploits the low-loss Si3N4 platform to deploy a MZI-based variable optical attenuator followed by a thermo-optic phase shifter to optimize the sensor performance achieving resonance extinction ratio values at the MZI output of more than 35 dB. Experimental evaluation of a gold-based sensor revealed a bulk refractive index sensitivity of 1930 nm/RIU. In addition, we experimentally demonstrate that the proposed plasmo-photonic waveguide platform can migrate from gold (Au) to Aluminum (Al), demonstrating the first step towards a fully CMOS compatible plasmo-photonic interferometric sensor.

Paper Details

Date Published: 26 February 2020
PDF: 7 pages
Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 112841V (26 February 2020); doi: 10.1117/12.2543547
Show Author Affiliations
E. Chatzianagnostou, Aristotle Univ. of Thessaloniki (Greece)
A. Manolis, Aristotle Univ. of Thessaloniki (Greece)
G. Dabos, Aristotle Univ. of Thessaloniki (Greece)
D. Ketzaki, Aristotle Univ. of Thessaloniki (Greece)
B. Chmielak, AMO GmbH, Advanced Microelectronic Ctr. Aachen (Germany)
A. L. Giesecke, AMO GmbH, Advanced Microelectronic Ctr. Aachen (Germany)
C. Porschatis, AMO GmbH, Advanced Microelectronic Ctr. Aachen (Germany)
P. J. Cegielski, AMO GmbH, Advanced Microelectronic Ctr. Aachen (Germany)
S. Suckow, AMO GmbH, Advanced Microelectronic Ctr. Aachen (Germany)
L. Markey, CNRS, Univ. de Bourgogne (France)
J.-C. Weeber, CNRS, Univ. de Bourgogne (France)
A. Dereux, CNRS, Univ. de Bourgogne (France)
S. Schrittwieser, AIT Austrian Institute of Technology (Austria)
R. Heer, AIT Austrian Institute of Technology (Austria)
N. Pleros, Aristotle Univ. of Thessaloniki (Greece)
D. Tsiokos, Aristotle Univ. of Thessaloniki (Greece)
Bialoom Ltd. (Cyprus)


Published in SPIE Proceedings Vol. 11284:
Smart Photonic and Optoelectronic Integrated Circuits XXII
Sailing He; Laurent Vivien, Editor(s)

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