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Graphene on silicon-nitride photodetector
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Paper Abstract

Even though graphene is a gapless material, it demonstrates strong interband absorption from a broad range of wavelengths between VIS and NIR. Recent photocurrent graphene-based detectors demonstrated strong photoresponse signal near the graphene/metal boundaries. To increase the response time of photodetectors, the use of low thermal capacity materials and structures are required. SiN membranes are good candidates due to their high-quality factor (up to 106-107), low mass and excellent optical properties. The motivation for this study was based on a lack of any suitable solution for nano-dimension form factor detector that could be integrated into 3D photonic bandgap structures for real-time internal characterization.

Paper Details

Date Published: 31 December 2019
PDF: 2 pages
Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 1120105 (31 December 2019); doi: 10.1117/12.2543391
Show Author Affiliations
Tania Moein, Swinburne Univ. of Technology (Australia)
Melbourne Ctr. for Nanofabrication (Australia)
Darius Gailevicius, Vilnius Univ. (Lithuania)
Tomas Katkus, Swinburne Univ. of Technology (Australia)
Soon Hock Ng, Swinburne Univ. of Technology (Australia)
Stefan Lundgaard, Swinburne Univ. of Technology (Australia)
Simonas Varapnickas, Vilnius Univ. (Lithuania)
David J. Moss, Swinburne Univ. of Technology (Australia)
Hamza Kurt, TOBB Univ. of Economics and Technology (Turkey)
Vygantas Mizeikis, Shizuoka Univ. (Japan)
Kestutis Staliunas, Univ. Politecnica de Catalunya (Spain)
Institucio Catalana de Recerca i Estudis Avancats (ICREA) (Spain)
Mangirdas Malinauskas, Vilnius Univ. (Lithuania)
Tokyo Tech World Research Hub Initiative (WRHI) (Japan)

Published in SPIE Proceedings Vol. 11201:
SPIE Micro + Nano Materials, Devices, and Applications 2019
M. Cather Simpson; Saulius Juodkazis, Editor(s)

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