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Proceedings Paper

High performance and control of THz quantum cascade lasers (Conference Presentation)

Paper Abstract

We report on high performance Terahertz Quantum Cascade Lasers with InGaAs and GaAs active regions. Modified doping profiles derived from symmetric structures allowed achieving record output powers of double metal InGaAs/InAlAs THz Quantum Cascade Lasers. The increase of the Al concentration of the barriers in GaAs/AlGaAs devices helped to increase the operating temperature to above 191 K while keeping the threshold current low. This has enabled laser operation by thermoelectric cooling which is very important for application. We demonstrate laser wavelength switching by magnetic field and wavelength selection in Random THz Quantum Cascade Lasers by spatially controlled near-infrared excitation

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011J (9 March 2020); doi: 10.1117/12.2543386
Show Author Affiliations
Martin Kainz, Technische Univ. Wien (Austria)
Sebastian Schönhuber, Technische Univ. Wien (Austria)
Michael Jaidl, Technische Univ. Wien (Austria)
Gottfried Strasser, Technische Univ. Wien (Austria)
Maxwell Andrews, Technische Univ. Wien (Austria)
Juraj Darmo, Technische Univ. Wien (Austria)
Karl Unterrainer, Technische Univ. Wien (Austria)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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