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Proceedings Paper

Electrical annealing for Ge ion-implanted directional couplers
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Paper Abstract

Electrical annealing of erasable directional couplers (DCs) was realized. Titanium nitride (TiN) micro-heaters were used to electrically heat up and anneal the Ge-ion implanted regions in silicon, which are used as the coupling waveguides in the erasable DCs. The refractive index of implanted silicon was reduced rapidly by electrical annealing, so that the DCs were effectively erased. The whole annealing process can be accomplished in about 2 seconds. Based on the simulation results, the implanted region can be heated up to about 700 °C.

Paper Details

Date Published: 26 February 2020
PDF: 6 pages
Proc. SPIE 11285, Silicon Photonics XV, 1128512 (26 February 2020); doi: 10.1117/12.2543355
Show Author Affiliations
Xingshi Yu, Univ. of Southampton (United Kingdom)
Xia Chen, Univ. of Southampton (United Kingdom)
Milan M. Milosevic, Univ. of Southampton (United Kingdom)
Xingzhao Yan, Univ. of Southampton (United Kingdom)
Shinichi Saito, Univ. of Southampton (United Kingdom)
Graham T. Reed, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 11285:
Silicon Photonics XV
Graham T. Reed; Andrew P. Knights, Editor(s)

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