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Proceedings Paper

Low series resistance N-type AlGaAs/AlAs distributed Bragg reflector grown by MOCVD
Author(s): Zhenyu Wen; Jianjun Li; Hongkang Cao; Jun Wang; Xiaoqian Wang
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Paper Abstract

N-type AlGaAs Bragg reflectors (DBRs) are an important part of optoelectronic devic-type AlGaAs Bragg reflectors (DBRs) are an important part of optoelectronic devices such as light-emitting diodes and vertical cavity surface emitting lasers and reducing the series resistance is critical to the performance of the device. In this paper, four kinds of modulation-doped 20-cycle N-type Al0.5Ga0.5As/AlAs DBR were grown on N-type GaAs substrate by MOCVD. The white light reflection spectrum measurement results show that the peak wavelength of the epitaxial wafer meets the requirements of red light band. The upper and lower electrodes were prepared for each of the four structures, and the IV characteristics were tested after Cleavaged. The results show that the series resistance of the epitaxial wafer with the AlGaAs layer concentration of 1×1019 cm-3 and the AlAs layer doping concentration of 5×1018 cm-3 is the smallest. The resistance value was 1.36×10 -6 Ω cm 2. It shows that the modulation doping method can effectively reduce the series resistance of DBR.

Paper Details

Date Published: 12 March 2020
PDF: 6 pages
Proc. SPIE 11440, 2019 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 114400A (12 March 2020); doi: 10.1117/12.2543342
Show Author Affiliations
Zhenyu Wen, Beijing Univ. of Technology (China)
Jianjun Li, Beijing Univ. of Technology (China)
Hongkang Cao, Beijing Univ. of Technology (China)
Jun Wang, Beijing Univ. of Technology (China)
Xiaoqian Wang, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 11440:
2019 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices
Baojun Li; Xingjun Wang; Ya Sha Yi, Editor(s)

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