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Proceedings Paper

High-NA EUV lithography optics becomes reality
Author(s): Lars Wischmeier; Paul Graeupner; Peter Kuerz; Winfried Kaiser; Jan van Schoot; Joerg Mallmann; Joost de Pee; Judon Stoeldraijer
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Paper Abstract

For each lithography scanner the optics is a key component. While the NXE:3400 with ZEISS Starlith®3400 optics at Numerical Aperture of 0.33 is entering high-volume manufacturing in customer factories, we are developing high NA optics with a Numerical Aperture of 0.55. This optics consists of a highly flexible illumination system and a projection optics enabling single-exposure sub 8nm half-pitch resolution. In this paper, we give an overview of the progress of ZEISS High-NA EUV program where production of first mirrors and frames has already been started.

Paper Details

Date Published: 23 March 2020
PDF: 11 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132308 (23 March 2020); doi: 10.1117/12.2543308
Show Author Affiliations
Lars Wischmeier, Carl Zeiss SMT GmbH (Germany)
Paul Graeupner, Carl Zeiss SMT GmbH (Germany)
Peter Kuerz, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Jan van Schoot, ASML Netherlands B.V. (Netherlands)
Joerg Mallmann, ASML Netherlands B.V. (Netherlands)
Joost de Pee, ASML Netherlands B.V. (Netherlands)
Judon Stoeldraijer, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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