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Proceedings Paper

Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)
Author(s): Marta Rio Calvo; Jean Baptiste Rodriguez; Laurent Cerutti; Laura Monge Bartolome; Michael Bahriz; Eric Tournié

Paper Abstract

The monolithic integration of III-V semiconductors on on-axis silicon is currently under active consideration. In this work we propose a novel epitaxial procedure to grow high quality, anti-phase boundary free GaSb layers on on-axis Si. Broad-area laser diodes based on AlGaAsSb/GaInAsSb QWs exhibit threshold current densities lower than 1 kA.cm-2 whereas narrow-ridge lasers operate cw above room temperature. Our results open the way to the epitaxial integration of a variety of IR lasers on on-axis Si.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010J (9 March 2020); doi: 10.1117/12.2542781
Show Author Affiliations
Marta Rio Calvo, Univ. de Montpellier (France)
Jean Baptiste Rodriguez, Univ. de Montpellier (France)
Laurent Cerutti, Univ. de Montpellier (France)
Laura Monge Bartolome, Univ. de Montpellier (France)
Michael Bahriz, Univ. de Montpellier (France)
Eric Tournié, Univ. de Montpellier (France)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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